Patent · US Expired

Method for storing data in a memory device with the possibility of access to redundant memory cells

US6819606B2 · kind B2 · utility

1Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Benedix · Hersbruck, DE
Stefan Dankowski · Hersbruck, DE
Reinhard Dueregger · Poing, DE
Wolfgang Ruf · Friedberg, DE

Key dates

Filing date	Jan 9, 2003
Grant date	Nov 16, 2004
Priority date	—
Expiry date	Jan 9, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/70
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method is provided for storing data in a memory device having memory cells arranged in memory cell rows and memory cell columns. The method can include a step for providing redundant memory cells in the memory device. The method can also include a step for localizing defective cells. Further, the method can include a step of accessing the redundant memory cells by means of a predeterminable access mode. The method can also include a step of bypassing defective memory cells of the memory device in a manner dependent on the predeterminable access mode during operation of the memory device for accessing redundant memory cells and for replacement by redundant memory cells. Further, the method can include a step for providing redundant memory cells for storing additional information describing a defect correction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.