Dopant diffusion barrier layer for use in III-V structures
US6819695B1 · kind B1 · utility
4Cited by
15References
20Claims
0Family size
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Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant diffusion barrier layer prevents dopant diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.