Etchant
US6821452B2 · kind B2 · utility
1Cited by
4References
6Claims
0Family size
Inventors
Key dates
| Filing date | Jun 27, 2003 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.