Fully undercut resist systems using E-beam lithography for the fabrication of high resolution MR sensors
US6821715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2001 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Mar 17, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A suspended resist bridge suitable for lithographically patterning MR sensors having trackwidths narrower than 0.2 micron is fabricated using the method of the present invention. First, PMGI is spun onto a substrate to form a first thin resist layer. Next, PMMA is spun onto the first resist layer to form a second resist layer. The PMMA layer is exposed to an electron beam to pattern the trackwidth of the MR sensors. E-beam exposed PMMA is then developed in an IPA solution. The resist structure is then placed in a basic solution for dissolving PMGI, which results in a fully undercut resist bridge that is used for patterning the MR sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.