Semiconductor device and its manufacturing method
US6821797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Sep 26, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.