Semiconductor device, semiconductor substrate, and manufacture method
US6821805B1 · kind B1 · utility
30Cited by
10References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2000 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Oct 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.