METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A METAL OXIDE LAYER DISPOSED ON ANOTHER LAYER TO PROTECT THE OTHER LAYER FROM DIFFUSION OF IMPURITIES AND INTEGRATED CIRCUIT DEVICES MANUFACTURED USING SAME
US6821862B2 · kind B2 · utility
75Cited by
14References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2001 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices are manufactured by exposing at least a portion of an insulation layer that comprises oxygen to a metal precursor that is reactive with oxygen so as to form a metal oxide layer on the portion of the insulation layer. The metal oxide layer may reduce the diffusion of impurities, such as hydrogen, into the insulation layer, which may degrade the electrical characteristics of the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.