Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus
US6821871B2 · kind B2 · utility
0Cited by
13References
12Claims
0Family size
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Key dates
| Filing date | Jun 13, 2001 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Jun 13, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C8/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at which the dopant gas is allowed to flow. A silicon wafer 10 on whose surface an amorphous silicon film 12 has been formed is placed in a diffusion furnace. After this, phosphine (PH3) or a mixed gas containing phosphine is allowed to begin flowing over the wafer 15 and the phosphorus is diffused into the silicon film 12 before the amorphous silicon film 12 crystallizes and changes into a polysilicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.