Manufacturing method of carbon nanotube transistors
US6821911B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Dec 5, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A manufacturing method of carbon nanotube transistors is disclosed. The steps include: forming an insulating layer on a substrate; forming a first oxide layer on the insulating layer using a solution with cobalt ion catalyst by spin-on-glass (SOG); forming a second oxide layer on the first oxide layer using a solution without the catalyst; forming a blind hole on the second oxide layer using photolithographic and etching processes, the blind hole exposing the first oxide layer, the sidewall of the second oxide layer, and the insulating layer; forming a single wall carbon nanotube (SWNT) connecting the first oxide layer separated by the blind hole and parallel to the substrate; and forming a source and a drain connecting to both ends of the SWNT, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.