Trench cell for a DRAM cell array

US6822281B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Peter Voigt · Hallbergmoos, DE
• Gerhard Enders · Glen Allen, US

Key dates

• Filing date: Mar 24, 2003
• Grant date: Nov 23, 2004
• Expiry date: Mar 24, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/213

Abstract

A trench cell for use in a DRAM array includes a vertical selection transistor of a first conductivity type at the—seen in the bit line direction—first side of the trench hole, a blocking doping region near the surface, of a second conductivity type, is provided adjacent to the trench hole, the blocking doping region lying opposite the vertical selection transistor. As a result, leakage currents can be avoided and, in addition, the trench cells can be disposed at a shorter distance from one another.