Low temperature MIM capacitor for mixed-signal/RF applications
US6822283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Sep 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
Abstract
A method for fabricating an MIM capacitor on a substrate. A region of the substrate is dedicated for use as an electrode area of the MIM capacitor. The electrode area of the MIM capacitor may be increased by utilizing at least one spacer formed on an associated planar metal surface, wherein the planar metal surface is formed upon the substrate. An increase in a gain factor of the electrode area is thus dependent upon an associated spacer height and particular number of islands or vias. A roughened surface is thus created for use as a roughened electrode for subsequent capacitor processes. Fabricating spacers made of conducting or non-conducting materials on the associated planar metal surface can create such an electrode. The MIM capacitor formed thereof can be utilized in mixed-signal and RF applications and is fully compatible with COMS logic fabrication processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.