Base for a NPN bipolar transistor
US6822314B2 · kind B2 · utility
42Cited by
3References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Jun 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
Abstract
An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.