Packaged RF power transistor having RF bypassing/output matching network
US6822321B2 · kind B2 · utility
27Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The linearity of a wideband RF power transistor amplifier is improved by including output matching circuit and an integrated bias/RF diplexer with RF and video bypassing capacitor network within the transistor package and connected directly to the transistor. By placing the RF and video bypass power supply circuitry within the package and close to the transistor, the input impedance resonance can be increased from approximately 50 MHz to over 125 MHz, thereby reducing AM/PM distortion in the output signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.