Cree Microwave, LLC
19Patents
1Active
19Granted
33Portfolio score
Filing activity: Apr 12, 1996 → Jul 2, 2007 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6791417B2 | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances | Electricity | 65 | Expired |
| US6819184B2 | RF transistor amplifier linearity using suppressed third order transconductance | Electricity | 54 | Expired |
| US6888167B2 | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding | Electricity | 46 | Expired |
| US6798295B2 | Single package multi-chip RF power amplifier | Electricity | 37 | Expired |
| US7061057B2 | Laterally diffused MOS transistor having N+ source contact to N-doped substrate | Electricity | 27 | Expired |
| US6822321B2 | Packaged RF power transistor having RF bypassing/output matching network | Electricity | 27 | Expired |
| US6737922B2 | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division | Electricity | 25 | Expired |
| US6700444B2 | N-way RF power amplifier with increased backoff power and power added efficiency | Electricity | 23 | Expired |
| US6740548B2 | Method of manufacture of silicon on insulator device with improved heat removal | Electricity | 20 | Expired |
| US6900501B2 | Silicon on insulator device with improved heat removal | Electricity | 19 | Expired |
| US7259033B2 | Flip-chip bonding of light emitting devices | Electricity | 13 | Expired |
| US7307314B2 | LDMOS transistor with improved gate shield | Electricity | 10 | Expired |
| US6506648B1 | Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure | Electricity | 8 | Expired |
| US6720228B1 | Current source bias circuit with hot carrier injection tracking | Electricity | 4 | Expired |
| US6548869B2 | Voltage limiting protection for high frequency power device | Electricity | 3 | Expired |
| US6549090B2 | Inverted coplanar waveguide coupler with integral microstrip connection ports | Electricity | 2 | Expired |
| US6437416B1 | Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance | Electricity | 1 | Expired |
| US6525423B2 | Semiconductor device package and method of die attach | Electricity | 0 | Expired |
| US7608860B2 | Light emitting devices suitable for flip-chip bonding | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.