Method of treating an insulting layer
US6824699B2 · kind B2 · utility
1Cited by
13References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 2003 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | May 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.