Hydrogen anneal for creating an enhanced trench for trench MOSFETS
US6825087B1 · kind B1 · utility
8Cited by
21References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1999 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a trench in a substrate or in an epitaxial layer, previously grown over the semiconductor substrate, wherein an anneal step, using hydrogen gas results in rounded corners without the need for a rounding etch or any other processing steps to round the corners.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.