Method of depositing a conductive niobium monoxide film for MOSFET gates
US6825106B1 · kind B1 · utility
267Cited by
5References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided to deposit niobium monoxide gates. An elemental metal target, or a composite niobium monoxide target is provided within a sputtering chamber. A substrate with gate dielectric, for example silicon dioxide or a high-k gate dielectric, is provided in the sputtering chamber. The sputtering power and oxygen partial pressure within the chamber is set to deposit a film comprising niobium monoxide, without excess amounts of elemental niobium, NbO2 insulator, or Nb2O5 insulator. The deposition method may be incorporated into a standard CMOS fabrication process, or a replacement gate CMOS process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.