Manufacturing method of semiconductor device and substrate processing apparatus
US6825126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2003 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Apr 25, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature. In the film-forming step, after the substrate temperature is raised up to the film-forming temperature, a film-forming process is performed by a thermal CVD method by supplying a source gas onto the substrate (205), and thereafter, the RPO process is performed (206). In this film-forming step, the film-forming source supply onto the substrate and the RPO process are preferably repeated a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.