Termination structure incorporating insulator in a trench
US6825510B2 · kind B2 · utility
24Cited by
11References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A power semiconductor device 10 has increased breakdown voltage due to an oxide termination structure. A peripheral trench 58 is filled with a dielectric material, such as silicon dioxide. The trench extends below the P well 22 that includes the source 32. The electric field at the border to P well 22 and trench 60 turns upward toward the surface and passes through dielectric 60. A field plate 64 coves portions of the P well 22 and the dielectric 60.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.