Semiconductor device having fuse circuit on cell region and method of fabricating the same
US6825511B2 · kind B2 · utility
5Cited by
2References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Oct 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, capable of improving integration density and solving problems that may occur in a laser repair process, and a method of fabricating the same are provided. A fuse circuit is formed in a cell region, not in a peripheral region, and thus it is possible to reduce the size of a semiconductor chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.