Semiconductor light emitting device and fabrication method thereof
US6828591B2 · kind B2 · utility
14Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2001 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Dec 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
Abstract
Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.