Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component

US6828605B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ignaz Eisele · Icking, DE
• Walter Hansch · Haag in Oberbayern, DE
• Christoph Fink · Hersbruck, DE
• Wolfgang Werner · Hersbruck, DE

Key dates

• Filing date: Dec 11, 2001
• Grant date: Dec 7, 2004
• Expiry date: Dec 11, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/605

Abstract

A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.