Nonvolatile semiconductor memory device covered with insulating film which is hard for an oxidizing agent to pass therethrough
US6828624B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2000 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Apr 25, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/909
Abstract
A nonvolatile semiconductor memory device includes comprises: an element isolation region being in contact with a first element region, an insulating film covering a memory cell, a peripheral transistor and the element isolation region, an inter-level insulating film provided on the surface of the insulating film, and a contact hole provided in the inter-level insulating film and the insulating film. The inter-level insulating film contains an insulator different from the insulating film. The contact hole reaches at least one of source and drain diffusion layers of the memory cell and overlaps the element isolation region. The insulating film contains an insulator different from the element isolation region and the insulating film is harder for an oxidizing agent to pass therethrough than a silicon oxide film. A surface of the insulating film is oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.