Riichiro Shirota
192Patents
35h-index
110Co-inventors
93Inventor score
Filing activity: Nov 17, 1988 → Sep 1, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5774397A | Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state | Physics | 622 | Expired |
| US4959812A | Electrically erasable programmable read-only memory with NAND cell structure | Physics | 528 | Expired |
| US7259992B2 | Semiconductor memory device with a memory cell array formed on a semiconductor substrate | Physics | 240 | Expired |
| US8008732B2 | Semiconductor memory and method of manufacturing the same | Electricity | 232 | Active |
| US5602789A | Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller | Physics | 195 | Expired |
| US7696559B2 | Semiconductor memory device including pillar-shaped semiconductor layers and a method of fabricating the same | Physics | 179 | Active |
| US6134140A | Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells | Physics | 179 | Expired |
| US5386422A | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Physics | 168 | Expired |
| US5555204A | Non-volatile semiconductor memory device | Physics | 141 | Expired |
| US5469444A | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Physics | 140 | Expired |
| US5321699A | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Physics | 127 | Expired |
| US6252798A | Nonvolatile semiconductor memory device capable of controlling mutual timing of write voltage pulse and transfer voltage pulse | Physics | 124 | Expired |
| US4939690A | Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation | Physics | 109 | Expired |
| US6845042B2 | Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems | Electricity | 102 | Expired |
| US5946231A | Non-volatile semiconductor memory device | Physics | 82 | Expired |
| US5361227A | Non-volatile semiconductor memory device and memory system using the same | Physics | 75 | Expired |
| US6014330A | Non-volatile semiconductor memory device | Physics | 75 | Expired |
| US6859394B2 | NAND type non-volatile semiconductor memory device | Physics | 74 | Expired |
| US6549464B2 | Nonvolatile semiconductor memory device | Physics | 73 | Expired |
| US6798698B2 | Nonvolatile semiconductor memory device | Physics | 58 | Expired |
| US6493265B2 | Nonvolatile semiconductor memory device | Physics | 57 | Expired |
| US5293337A | Electrically erasable programmable read-only memory with electric field decreasing controller | Physics | 56 | Expired |
| US6151249A | NAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistors | Physics | 54 | Expired |
| USRE35838E | Electrically erasable programmable read-only memory with NAND cell structure | General | 52 | Expired |
| US5453955A | Non-volatile semiconductor memory device | Physics | 52 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.