Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6829161B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Jan 10, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.