GRANDIS
100Patents
62Active
100Granted
53Portfolio score
Filing activity: Aug 6, 2002 → Sep 9, 2020 · 45 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6992359B2 | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization | Emerging Cross-Sectional Technologies | 315 | Expired |
| US6714444B2 | Magnetic element utilizing spin transfer and an MRAM device using the magnetic element | Electricity | 308 | Expired |
| US7187577B1 | Method and system for providing current balanced writing for memory cells and magnetic devices | Physics | 290 | Expired |
| US7009877B1 | Three-terminal magnetostatically coupled spin transfer-based MRAM cell | Electricity | 269 | Expired |
| US6985385B2 | Magnetic memory element utilizing spin transfer switching and storing multiple bits | Electricity | 246 | Expired |
| US6967863B2 | Perpendicular magnetization magnetic element utilizing spin transfer | Electricity | 241 | Expired |
| US6829161B2 | Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element | Physics | 240 | Expired |
| US6847547B2 | Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element | Physics | 235 | Expired |
| US7502249B1 | Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements | Emerging Cross-Sectional Technologies | 224 | Active |
| US7224601B2 | Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element | Electricity | 222 | Expired |
| US6958927B1 | Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element | Electricity | 219 | Expired |
| US6888742B1 | Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element | Physics | 219 | Expired |
| US7190611B2 | Spin-transfer multilayer stack containing magnetic layers with resettable magnetization | Physics | 213 | Expired |
| US6838740B2 | Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element | Electricity | 213 | Expired |
| US6933155B2 | Methods for providing a sub .15 micron magnetic memory structure | Electricity | 203 | Expired |
| US6920063B2 | Magnetic element utilizing spin transfer and an MRAM device using the magnetic element | Electricity | 161 | Expired |
| US7242045B2 | Spin transfer magnetic element having low saturation magnetization free layers | Electricity | 160 | Expired |
| US7430135B2 | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density | Physics | 157 | Active |
| US7272034B1 | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells | Physics | 156 | Expired |
| US7576956B2 | Magnetic tunnel junction having diffusion stop layer | Electricity | 152 | Active |
| US7272035B1 | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells | Physics | 152 | Expired |
| US7088609B2 | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same | Physics | 149 | Expired |
| US7379327B2 | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins | Physics | 143 | Active |
| US7369427B2 | Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements | Electricity | 143 | Expired |
| US7110287B2 | Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer | Physics | 142 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.