Method and system for programming a memory device
US6829190B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Aug 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.