Hybrid confinement layers of buried heterostructure semiconductor laser
US6829275B2 · kind B2 · utility
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6References
24Claims
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Key dates
| Filing date | Dec 20, 2001 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device such as a buried heterostructure semiconductor laser includes a semiconductor substrate supporting an active region comprised of a multiple quantum well active region and confinement layers having defined gratings and grating overgrowth regions to produce a laser device. The device also includes a current confinement layer including a sequence of doped n-p-n-p semiconductor layers to produce a n-p-n-p blocking structure and a semi-insulating semiconductor material deposited over the n-p-n-p blocking structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.