Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US6830650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Sep 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.