Resist composition and patterning process
US6830866B2 · kind B2 · utility
51Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2002 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Sep 1, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition comprising a hydrogenated product of ring-opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance, and lends itself to micropatterning with electron beams or deep-UV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.