Method for improving retention reliability of ferroelectric RAM
US6830938B1 · kind B1 · utility
16Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jun 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
The present invention can improve and/or modify data retention lifetimes for ferroelectric devices by baking them prior to or during packaging. A ferroelectric device is programmed to a particular state and then baked for a selected period of time at a selected temperature. This pre-baking or imprinting causes the device to be imprinted or have a preference for the particular state and reduces loss of signal margin over time, thereby at least partially preserving data retention capabilities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.