Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes
US6830962B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides integrated semiconductor devices that are formed upon an SOI substrate having different crystal orientations that provide optimal performance for a specific device. Specifically, an integrated semiconductor structure including at least an SOI substrate having a top semiconductor layer of a first crystallographic orientation and a semiconductor material of a second crystallographic orientation, wherein the semiconductor material is substantially coplanar and of substantially the same thickness as that of the top semiconductor layer and the first crystallographic orientation is different from the second crystallographic orientation is provided. The SOI substrate is formed by wafer bonding, ion implantation and annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.