Method for manufacturing semiconductor device and the device thereof
US6830969B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 2002 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jan 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
The present invention relates to a method of manufacturing a semiconductor device. The method comprises the steps of forming a plurality of lower bit lines arranged in a first direction on a semiconductor substrate by performing ion implantation using a mask defining the lower bit lines, forming a lower field oxide film within a region in which the lower bit lines are formed to define an active region and a device isolation region, forming a first insulating film for accumulating charges on the active region, forming a plurality of word lines arranged in parallel in a second direction orthogonal to the first direction of the lower bit lines, depositing an oxide film on the entire structure of the semiconductor substrate including the lower bit lines and the word lines, flattening the oxide film and then removing the oxide film on the word lines, forming a second insulating film for accumulating charges corresponding to the first insulating film for accumulating charges on the word lines and then forming an upper field oxide film corresponding to the lower field oxide film on the word lines, depositing polysilicon on the entire structure of the semiconductor substrate, performing io…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.