Semiconductor device manufacturing method
US6831000B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 5, 2004 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jan 5, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention comprises the steps of forming a bump metal film as a pattern having an opening portion on an area of a seed metal film that corresponds to a connecting pad of a semiconductor substrate, forming a through hole by etching the seed metal film, the connecting pad, and the semiconductor substrate located under the opening portion of the bump metal film while using the bump metal film as a mask, grinding a back surface of the semiconductor substrate, forming an insulating film on a side surface of the through hole, forming a through wiring in the through hole by an electroplating, and forming a metal bump by etching the seed metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.