Photodetector having improved photoresponsitivity over a broad wavelength region

US6831265B2 · kind B2 · utility

Assignee

• Fujitsu Quantum Devices Limited · JP

Inventors

• Yoshihiro Yoneda · Hiratsuka, JP
• Ikuo Hanawa · Yamanashi, JP

Key dates

• Filing date: Nov 15, 2002
• Grant date: Dec 14, 2004
• Expiry date: Dec 29, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/225

Abstract

A photodetector includes an optical absorption layer having a thickness d optimized with regard to a voltage applied across the optical absorption layer such that there occurs an increase of optical absorption coefficient at the wavelength of 1580 nm or longer.