Negative charge pump with bulk biasing
US6831499B2 · kind B2 · utility
25Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/078
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An n-channel MOS transistor negative-voltage charge pump is disclosed in which the bulks of the n-channel MOS transistors are biased in such a manner as to prevent turning on the parasitic bipolar transistor inherent in the CMOS environment of the charge pump structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.