Current or voltage generator with a temperature stable operating point
US6831503B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 2002 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/262
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A current or voltage generator is integrated onto a silicon wafer and may include a first element including a first NMOS transistor having its source connected to ground through an electrical resistance, a second element including a second NMOS transistor having its source connected to ground, and a bias circuit for the first and second elements. The second element may include a voltage divider. The gate of the second NMOS transistor may be connected to a dividing node of the voltage divider, and the anode of the voltage divider may be connected to the gate of the first NMOS transistor. Both elements may be biased at an operating point corresponding to an identical temperature stability point for both elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.