Inventor · Gap, FR

Francesco La Rosa

110Patents
10h-index
35Co-inventors
80Inventor score

Filing activity: Apr 29, 1998 → Mar 22, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6094394A Sense amplifier for non-volatile memory devices Physics 25 Expired
US8036020B2 Circuit for reading a charge retention element for a time measurement Physics 18 Active
US8809858B2 Device for protecting an integrated circuit against back side attacks Electricity 14 Active
US6058070A Glitch immune ATD circuitry Physics 13 Expired
US6507221B2 Circuit for the filtering of parasitic logic signals Electricity 12 Expired
US7529145B2 Method for reading electrically programmable and erasable memory cells, with bit line precharge-ahead Physics 12 Expired
US6897689B2 Programmable POR circuit with two switching thresholds Electricity 11 Expired
US7869268B2 Phase change memory erasable and programmable by a row decoder Emerging Cross-Sectional Technologies 11 Active
US8331203B2 Charge retention circuit for a time measurement Physics 11 Active
US6831503B2 Current or voltage generator with a temperature stable operating point Physics 10 Expired
US6934192B2 EEPROM memory protected against the effects from a breakdown of an access transistor Physics 9 Expired
US6738286B2 EEPROM memory comprising means for simultaneous reading of special bits of a first and second type Physics 9 Expired
US9224482B2 Hot-carrier injection programmable memory and method of programming such a memory Electricity 9 Active
US8901634B2 Nonvolatile memory cells with a vertical selection gate of variable depth Physics 9 Active
US8320176B2 EEPROM charge retention circuit for time measurement Physics 9 Active
US8305815B2 Sense amplifier with fast bitline precharge means Physics 8 Active
US6735733B2 Method for the correction of a bit in a string of bits Physics 8 Expired
US6072727A Dynamic sense amplifier for EPROM, EEPROM and flash-EPROM memory devices Physics 8 Expired
US6829169B2 Electrically erasable and programmable memory comprising an internal supply voltage management device Physics 8 Expired
US6049491A Bitline bias circuit for non-volatile memory devices Physics 7 Expired
US8339848B2 Programming of a charge retention circuit for a time measurement Physics 7 Active
US6724243B2 Bias circuit with voltage and temperature stable operating point Electricity 7 Expired
US8467251B2 Sense amplifier with fast bitline precharge means Physics 6 Active
US8963574B2 Circuit and method for detecting a fault attack Physics 6 Active
US8872177B2 Electric charge flow circuit for a time measurement Electricity 6 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.