Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability
US6833321B2 · kind B2 · utility
7Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Oct 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device is described. That method comprises forming a conductive layer that contacts a via, such that the conductive layer includes a higher concentration of an electromigration retarding amount of a dopant near the via than away from the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.