Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen
US6833331B2 · kind B2 · utility
6Cited by
22References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 26, 2002 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Nov 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode (9; see FIGS. 31 and 32) of a MISFET (Qs, Qn, Qp) A polysilazan SOG film (57) not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.