Edge termination in a trench-gate MOSFET

US6833583B2 · kind B2 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

• Michael A. A. In't Zandt · Veldhoven, NL
• Erwin Hijzen · Eindhoven, NL
• Raymond J. E. Hueting · Helmond, NL

Key dates

• Filing date: Sep 10, 2002
• Grant date: Dec 21, 2004
• Expiry date: Dec 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

To avoid premature breakdown at the edge of the active area of RESURF trench-gate MOS device, an edge field plate (24) can be placed with a connection to the gate and a second spaced field plate (24) in the same trench (12). The gate trench network (12) could be either formed by hexagon unit cells or by square unit cells. Since the RESURF condition requires a small cell pitch, self-aligned processing could be used.