Semiconductor device and method of manufacturing the same
US6833596B2 · kind B2 · utility
10Cited by
5References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed, which comprises a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode layer formed on the gate insulating film, source and drain regions formed at both sides of the gate electrode layer, and a channel region between the source and drain regions, wherein the gate electrode layer comprises a polycrystalline silicon layer and a metal layer formed between the gate insulating film and the polycrystalline silicon layer, and the metal layer has an electron density of 1.0×1021 atoms/cm3 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.