Multiple work function gates
US6835639B2 · kind B2 · utility
116Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A method of forming a first and second transistors with differing work function gates by differing metals deposited to react with a silicon or silicon-germanium gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.