Semiconductor integrated circuit device
US6836179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Nov 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/262
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit device, a circuit block has a first MOS transistor, and a leakage current control circuit having a second MOS transistor and a current source, a source and drain circuit of the second MOS transistor is formed between the power supply line of the circuit block and a voltage point where operating voltage is supplied. This current source is connected to the power supply line and in a first state, the power supply line is driven to a first voltage by the second MOS transistor. In a second state, the power supply line is controlled at a second voltage by current flow in the current source and, the voltage applied across the source and drain of the first MOS transistor in the second state is smaller than the voltage applied across the source and drain of the first MOS transistor in the first state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.