System and method for reading a memory cell
US6836422B1 · kind B1 · utility
13Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2003 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Aug 4, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of performing a read operation from a first memory cell in a memory cell string that includes a first memory cell coupled to a second memory cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first memory cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second memory cells in response to writing the first memory cell to a first state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.