MRAM having two write conductors
US6836429B2 · kind B2 · utility
6Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Apr 18, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random-access memory (MRAM) cell according to an embodiment of the invention is disclosed that comprises a magnetic storage element having an easy axis and a hard axis, a write conductor positioned along one of the easy axis and the hard axis, and a write conductor positioned at a non-parallel and non-perpendicular angle to both of the easy axis and the hard axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.