Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices

US6838115B2 · kind B2 · utility

Assignee

• FSI INTERNATIONAL, INC. · US

Inventors

• Devendra Kumar · Rochester Hills, US
• Jeffrey Womack · Lake Oswego, US
• Vuong P. Nguyen · San Jose, US
• Jack S. Kasahara · Los Gatos, US
• Sokol Ibrani · Pleasanton, US

Key dates

• Filing date: Jul 11, 2001
• Grant date: Jan 4, 2005
• Expiry date: Jul 11, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67109
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.