Process for fabricating a mask
US6838213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2002 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for fabricating a mask, including depositing a membrane layer on a substrate, etching a backside of the substrate to form membrane windows, depositing at least one scattering layer on the membrane layer depositing a mask layer on the at least one scattering layer exposing the mask layer corresponding to membrane windows to reveal pattern areas, transferring the pattern areas in the mask layer to the at least one scattering layer, transferring at least one of the pattern areas in the at least scattering layer to the membrane layer to produce a hybrid stencil/continuous membrane mask. Alternatively, all of the pattern areas in the at least one scattering layer are transferred to the membrane layer to produce a stencil mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.