Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
US6838229B2 · kind B2 · utility
10Cited by
8References
21Claims
0Family size
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Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/128
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 μm and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.