Method for controlling deposition of dielectric films
US6838293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2003 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | May 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.